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Full front poly area = parasitic absorption and net efficiency loss
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Influence of high temperature anneal on SixCy layers
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Headquarter for Innovation, Technology & Quality in Germany; Production sites in Asia and USA
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Passivating thin films are essential to limit charge carrier recombination
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TOPCORE Structure with Local FSF lmpact of the Boron Doping Profiles for the Hole Selective Layer Efficiency above 26%
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